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| CLT130,CLT131,CLT132,CLT133 NPN Silicon Phototransistors CLT130, CLT131, CLT132 and CLT133 are exact replacements for obsolete part numbers CLT2130, CLT2140, CLT2150 and CLT2160. 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.190 (4.83) 0.176 (4.47) (R) Clairex 0.215 (5.46) 0.205 (5.21) Technologies, Inc. July, 2001 COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE EMITTER 0.100 (2.54) dia 0.060 (1.52) max 0.025 (0.64) max 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48) ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) Case 17 features * * * * * high sensitivity 18 acceptance angle custom aspheric lensed TO-18 package transistor base is bonded usable throughout visible and near infrared spectrum absolute maximum ratings (TA = 25C unless otherwise stated) storage temperature.............................................................................-65C to +150C operating temperature..........................................................................-65C to +125C (1) lead soldering temperature ...............................................................................260C collector-emitter voltage........................................................................................30V continuous collector current.................................................................................50mA (2) maximum continuous power dissipation............................................................250mW description The CLT130-CLT133 series are NPN silicon phototransistors mounted in TO-18 packages which feature custom double convex glass-to-metal sealed aspheric lenses. Narrow acceptance angle enables excellent on-axis coupling. These devices are mechanically and spectrally matched to the CLE130-CLE133 series IREDs. For additional information, call Clairex. notes: 1. 2. 0.06" (1.5mm) from the header for 5 seconds maximum Derate linearly 2.0mW/C from 25C free air temperature to TA = +125C. electrical characteristics (TA = 25C unless otherwise noted) symbol parameter Light current(1) IL ICEO V(BR)CEO tr, tf HP Collector dark current Collector-emitter breakdown Output rise and fall time Total angle at half sensitivity points CLT130 CLT131 CLT132 CLT133 min 0.60 1.2 2.4 4.0 30 typ 3 18 max 25 units mA mA mA mA nA V s deg. test conditions VCE=5V, Ee=1.5mW/cm 2 VCE=5V, Ee=1.5mW/cm 2 VCE=5V, Ee=1.5mW/cm 2 VCE=5V, Ee=1.5mW/cm VCE=10V, Ee=0 IC=100A VCC=5V, RL=100. 2 note: 1. Radiation source for all light current testing is a 940nm IRED. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Revised 12/01/04 Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com |
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